技术规格

EVD-Type three-phase 1.2kV SiC module

• 3^rd generation SiC MOSFET chips
• Ultra-low r_DSon
• Low switching losses, Q_g and C_rss
• Low inductance module < 9nH
• T_{vj_op} = 175°C
• 4.2kV DC 1 sec insulation
• Compact design
• Directly cooled PinFin baseplate
• High performance Si₃N₄ ceramic substrates
• Guiding elements for PCB and cooler assembly
• Intergrated NTC temperature sensor
• Press-fit contact technology
• RoHS and REACH compliant

EVD-type

• SCSS002EVD120mS
• SCSS002EVD120mSB

Maximum ratings

参数	价值
VDSS (at Tj = 25°C)	1200 V
VGSS	-10 to +22 V
Max. junction operating temperature	175 °C

MOSFET

MOSFET

参数	价值
rDSon (at Tj = 25°C)	2.1 mOhm
rDSon (at Tj = 175°C)	3.8 mOhm
Turn-off switching energy (VCC = 800 V, ID = 500 A, RG = 7 Ω, VGS = -4 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C)	39 mJ
Turn-on switching energy (VCC = 800 V, ID = 500 A, RG = 5 Ω, VGS = -4 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C)	19 mJ

Diode

参数	价值
Forward voltage (ID = -500 A, VGS = 18 V, Tj = 25°C)	1 V
Peak reverse recovery current (VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C)	7.7 mJ

Package

参数	价值
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar)	0.11 K/W
Module stray inductance (per switch)	8.5 nH

Dimension

参数	价值
Clearance distance in air (terminal to base and terminal to terminal)	4.5 mm
Surface creepage distance (terminal to base and terminal to terminal)	9.0 mm
Mass	720 g

Outline drawing

Outline drawing

Schematic circuit diagram