Industrial 62mm (ST-type) standard package featuring i20 ultra-low loss fine pattern trench IGBT chipset for 1700V and twice 200A
| 参数 | 价值 |
|---|---|
| 集电极-发射极电压 | 1700 V |
| 集电极直流电流 | 200 A |
| 最高运行结温 | 175 °C |
| 参数 | 价值 |
|---|---|
| 集电极-发射极饱和电压 (Tvj = 125°C) | 1.85 V |
| 关断损耗 (VCC = 900 V, IC = 200 A, RG = 4.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 51 mJ |
| 开通损耗 (VCC = 900 V, IC = 200 A, RG = 4 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 66 mJ |
| 参数 | 价值 |
|---|---|
| 正向压降 (Tvj = 125°C) | 1.85 V |
| 反向恢复 (VR = 600 V, IF = 200 A, dI/dt = 7184 A/µs, RG = 4 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 47 mJ |
| 参数 | 价值 |
|---|---|
| IGBT结-壳热阻 Rth(j-c)_IGBT | 0.108 K/W |
| 二极管结-壳热阻 Rth(j-c)_Diode | 0.175 K/W |
| IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch | 0.039 K/W |
| 二极管壳到散热器热阻 Rth(c-s)_Diode per switch | 0.045 K/W |
| 参数 | 价值 |
|---|---|
| 长 x 宽 x 高 | 106 x 62 x 30.9 mm³ |
| 电气间隙-端子到基板 | 23 mm |
| 电气间隙-端子到端子 | 11 mm |
| 爬电距离-端子到基板 | 29 mm |
| 爬电距离-端子到端子 | 23 mm |
| 重量 | 310 g |
Outline
Schematics
