Maximum ratings
| 参数 |
价值 |
| Collector-emitter voltage |
1200 V |
| DC collector current |
500 A |
| 最高运行结温 |
175 °C |
IGBT
| 参数 |
价值 |
| 集电极-发射极饱和电压 (IC = 500 A, VGE = 15 V, Tvj = 125°C) |
1.95 V |
| 关断损耗 (VCC = 600 V, IC = 500 A, RG = 2 Ω, VGS = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C) |
70 mJ |
| 开通损耗 (VCC = 600 V, IC = 500 A, RG = 1 Ω, VGS = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C) |
56 mJ |
Diode
| 参数 |
价值 |
| 正向压降 (ID = 500 A, Tj = 125°C) |
2.15 V |
| 反向恢复能量 (VR = 600 V, IF = 500 A, dI/dt = 8.34 kA/µs, RG = 1 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C) |
37 mJ |
Package
| 参数 |
价值 |
| 热阻 结点至流体 (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar) |
0.11 K/W |
| 模块自身杂散电感 (per switch) |
8.5 nH |
Dimension
| 参数 |
价值 |
| 电气间隙 (terminal to base and terminal to terminal) |
4.5 mm |
| 爬电距离 (terminal to base and terminal to terminal) |
9.0 mm |
| 重量 |
700 g |
