Chips

Schematic IGBT manufacturing

  • IGBT cell processing at decisive process stages
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THE WAFER

300 mm diameter

  • Produced in state-of-art world-class wafer fabs
  • Advanced thin-wafer processing for tailored buffer and anode
I20 5
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THE CHIP

Dimensions of the chip

  • 15.68 x 12.02 mm2
  • 125 micrometer thick
  • 236 dies per wafer
I 5
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THE CELL

Fine Pattern Trench Cell with Field Stop Backside

  • Fine pattern Trench / Narrow Mesa
  • Optimized N-Enhancement design
  • Short channel for low resistance

Low conduction losses (VCE,on)

  • Advanced 3D structure and P+ design
  • Laser annealed buffer and anode
  • Ultra thin N-base design

Low switching losses (Eoff and Eon)

SEM TYP IGBT RGB Black 1

Comparison

Controllability for IGBT turn-on

Tailoring the turn-on speed by the external gate resistor at nominal conditions

Comparison

High safe operating area at extreme conditions

Incrementally increased current is safely turned-off until short circuit mode is reached beyond >2.6x nominal current
IC
VCE
VGE
t (s)
Tcase = 125°C, varying Rg_on = from 8 to 0.47 Ohm, Ls = 30 nH at nominal conditions
Tcase = 175°C, Rg_off = 1.5 Ohm, Ls = 30 nH, IC incrementally increased from 1500 A to 2100 A, VCC = 800 V

Conclusion

Tailoring turn-on by external gate resistor

Adjustable to your application specifics

Benefits of this solution:

  • Controllability in IGBT turn-on is achieved and enables our customers to tune this device to their application needs

Conclusion

Robust IGBT Performance under SOA-conditions:

Even at case temperatures exceeding the maximum limits of the datasheet the robustness is given.

Benefits of this solution:

  • Robustness demonstration of the selected internal electrical layout
  • Reflection of excellent raw-material selection and build quality
  • Excellent ruggedness of our in-house i20 chip-set

Diode

It's in the details

Together with the IGBT​ we developed the accompanying free-wheeling diode enabling the best overall chip-set performance.
  • Advanced emitter efficiency management​
  • Anode: Diffusion profile optimization​
  • Cathode: Laser annealing of buffer and emitter​
  • Low diode losses (VF and Erec)

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