Maximum ratings
| 参数 |
价值 |
| 集电极-发射极电压 |
1200 V |
| 集电极直流电流 |
750 A |
| 最高运行结温 |
175 °C |
IGBT
| 参数 |
价值 |
| 集电极-发射极饱和电压 (Tvj = 125°C) |
1.95 V |
| 关断损耗 (VCC = 600 V, IC = 750 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) |
110 mJ |
| 开通损耗 (VCC = 600 V, IC = 750 A, RG = 0.47 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) |
82 mJ |
Diode
| 参数 |
价值 |
| 正向压降 (Tvj = 125°C) |
2.15 V |
| 反向恢复 (VR = 600 V, IF = 750 A, dI/dt = 5300 A/µs, RG = 0.47 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) |
45 mJ |
Package
| 参数 |
价值 |
| IGBT结-壳热阻 Rth(j-c)_IGBT |
0.04 K/W |
| 二极管结-壳热阻 Rth(j-c)_Diode |
0.067 K/W |
| IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch |
0.03 K/W |
| 二极管壳到散热器热阻 Rth(c-s)_Diode per switch |
0.036 K/W |
Dimension
| 参数 |
价值 |
| 长 x 宽 x 高 |
152 x 62 x 17 mm³ |
| 电气间隙-端子到基板 |
12.5 mm |
| 电气间隙-端子到端子 |
10 mm |
| 爬电距离-端子到基板 |
14.5 mm |
| 爬电距离-端子到端子 |
13 mm |
| 重量 |
350 g |
