ED-Type

技术规格

ED-type phase leg IGBT module

SISD0750 ED120i20 iso View Photo Lo Res 004
Maximum ratings

参数 价值
Collector-emitter voltage 1200 V
DC collector current​ 600 A
Max. junction operating temperature​ 175 °C
IGBT

参数 价值
Collector emitter saturation voltage (Tvj = 125°C) 1.7 V
Turn-off energy​ (VCC = 600 V, IC = 600 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 88 mJ
Turn-on energy​ (VCC = 600 V, IC = 600 A, RG = 0.47 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 50 mJ
Diode

参数 价值
Forward voltage drop (Tvj = 125°C) 1.95 V
Reverse recovery ​(VR = 600 V, IF = 600 A, dI/dt = 5700 A/µs, RG = 0.47 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 43 mJ
Package

参数 价值
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT 0.046 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode 0.077 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch 0.03 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch 0.036 K/W
Dimension

参数 价值
L x W x H 152 x 62 x 17 mm³
Clearance distance terminal to base​ 12.5 mm​
Clearance distance terminal to terminal​ 10 mm​
Surface creepage distance terminal to base​ 14.5 mm​
Surface creepage distance terminal to terminal​ 13 mm​
Mass​ 350 g
Mechanical Properties

Outline drawing

Mechanical Properties
Outline drawing

Schematic circuit diagram

Outline drawing

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