带输入整流器的 EP 型 H 桥 IGBT 模块
| 参数 | 价值 |
|---|---|
| 集电极-发射极电压 | 1700 V |
| 集电极直流电流 | 75 A |
| 最高运行结温 | 175 °C |
| 参数 | 价值 |
|---|---|
| 集电极-发射极饱和电压 (Tvj = 125°C) | 1.85 V |
| 关断损耗 (VCC = 900 V, IC = 75 A, RG = 4.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) | 17 mJ |
| 开通损耗 (VCC = 900 V, IC = 75 A, RG_A1 = 11 Ω, RG_A2 = 9 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) | 29 mJ |
| 参数 | 价值 |
|---|---|
| 正向压降 (Tvj = 125°C) | 1.85 V |
| 反向恢复 (VR = 900 V, IF = 75 A, RG_A1 = 11 Ω, RG_A2 = 9 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) | 17 mJ |
| Diode rectifier - Forward voltage drop (IF = 150 A, Tvj = 125°C) | 1.02 V |
| 参数 | 价值 |
|---|---|
| IGBT结-壳热阻 Rth(j-c)_IGBT | 0.240 K/W |
| 二极管结-壳热阻 Rth(j-c)_Diode | 0.390 K/W |
| Rectifier thermal resistance junction to case Rth(j-c)_RectifierDiode | 0.280 K/W |
| IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch | 0.094 K/W |
| 二极管壳到散热器热阻 Rth(c-s)_Diode per switch | 0.104 K/W |
| Rectifier thermal resistance case to heatsink Rth(c-s)_Rectifier | 0.159 K/W |
| 参数 | 价值 |
|---|---|
| 长 x 宽 x 高 | 122 x 62.5 x 17 mm³ |
| 电气间隙-端子到基板 | 10 mm |
| 端子到基板-端子到端子 | 10 mm |
| 爬电距离-端子到基板 | 7.5 mm |
| 爬电距离-端子到基板 | 10 mm |
| 重量 | 300 g |
Outline
Schematics
