SISD0200ST170i20-赛晶半导体ST封装模块

技术规格

EP-type phase leg IGBT module

• i20超低损耗精细沟槽栅型IGBT芯片组
• 带 H 桥和输入整流器的 PIM
• 高效Al2O3 绝缘陶瓷基板
• 低热阻铜底板
• 行业标准封装

EP-Type 1.7kV

• SISP0200EP170i20
• SISP0150EP170i20
• SISP0100EP170i20
• SISP0075EP170i20

Maximum ratings

参数	价值
集电极-发射极电压	1700 V
集电极直流电流	100 A
最高运行结温	175 °C​

IGBT

参数	价值
集电极-发射极饱和电压 (Tvj = 125°C)	1.85 V
关断损耗​ (VCC = 900 V, IC = 100 A, RG = 4.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	25 mJ
开通损耗​ (VCC = 900 V, IC = 100 A, RG_A1 = 11 Ω, RG_A2 = 6.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C)	39 mJ

Diode

参数	价值
正向压降 (Tvj = 125°C)	1.85 V
反向恢复 ​(VR = 900 V, IF = 100 A, RG_A1 = 11 Ω, RG_A2 = 6.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C)	23 mJ
Diode rectifier - Forward voltage drop (IF = 150 A, Tvj = 125°C)	1.02 V

Package

参数	价值
IGBT结-壳热阻 Rth(j-c)_IGBT	0.200 K/W
二极管结-壳热阻 Rth(j-c)_Diode	0.320 K/W
Rectifier thermal resistance junction to case Rth(j-c)_RectifierDiode	0.280 K/W
IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch	0.089 K/W
二极管壳到散热器热阻 Rth(c-s)_Diode per switch	0.099 K/W
Rectifier thermal resistance ​case to heatsink Rth(c-s)_Rectifier	0.159 K/W

Dimension

参数	价值
长 x 宽 x 高	122 x 62.5 x 17 mm³
电气间隙-端子到基板	10 mm
端子到基板-端子到端子	10 mm
爬电距离-端子到基板	7.5 mm
爬电距离-端子到基板	10 mm
重量	300 g

Mechanical Properties

Outline

Outline drawing

Schematics