SISS0500BEVD120i20 - 赛晶半导体EVD封装半桥碳化硅模块

技术规格

EVD-Type three-phase 1.2kV SiC module

• 3^rd generation SiC MOSFET chips
• Ultra-low r_DSon
• Low switching losses, Q_g and C_rss
• Low inductance module < 9nH
• T_{vj_op} = 175°C
• 4.2kV DC 1 sec insulation
• Compact design
• Directly cooled PinFin baseplate
• High performance Si₃N₄ ceramic substrates
• Guiding elements for PCB and cooler assembly
• Intergrated NTC temperature sensor
• Press-fit contact technology
• RoHS and REACH compliant

EVD-type

• SCSS002EVD120mS
• SCSS002EVD120mSB

Maximum ratings

参数	价值
Collector-emitter voltage	1200 V
DC collector current	500 A
最高运行结温	175 °C

IGBT

参数	价值
集电极-发射极饱和电压 (IC = 500 A, VGE = 15 V, Tvj = 125°C)	1.95 V
关断损耗 (VCC = 600 V, IC = 500 A, RG = 2 Ω, VGS = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C)	70 mJ
开通损耗 (VCC = 600 V, IC = 500 A, RG = 1 Ω, VGS = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C)	56 mJ

Diode

参数	价值
正向压降 (ID = 500 A, Tj = 125°C)	2.15 V
反向恢复能量 (VR = 600 V, IF = 500 A, dI/dt = 8.34 kA/µs, RG = 1 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C)	37 mJ

Package

参数	价值
热阻 结点至流体 (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar)	0.11 K/W
模块自身杂散电感 (per switch)	8.5 nH

Dimension

参数	价值
电气间隙 (terminal to base and terminal to terminal)	4.5 mm
爬电距离 (terminal to base and terminal to terminal)	9.0 mm
重量	700 g

Outline drawing

Outline

Schematics