SCSS002EVD120mS - 赛晶半导体EVD封装半桥碳化硅模块

技术规格

EVD-Type three-phase 1.2kV SiC module

• 3^rd generation SiC MOSFET chips
• Ultra-low r_DSon
• Low switching losses, Q_g and C_rss
• Low inductance module < 9nH
• T_{vj_op} = 175°C
• 4.2kV DC 1 sec insulation
• Compact design
• Directly cooled PinFin baseplate
• High performance Si₃N₄ ceramic substrates
• Guiding elements for PCB and cooler assembly
• Intergrated NTC temperature sensor
• Press-fit contact technology
• RoHS and REACH compliant

EVD-type

• SCSS002EVD120mS
• SCSS002EVD120mSB

Maximum ratings

参数	价值
VDSS (at Tj = 25°C)	1200 V
VGSS	-10 to +22 V
最高运行结温	175 °C

MOSFET

MOSFET

参数	价值
rDSon (at Tj = 25°C)	2.1 mOhm
rDSon (at Tj = 175°C)	3.8 mOhm
关断损耗 (VCC = 800 V, ID = 500 A, RG = 7 Ω, VGS = -4 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C)	39 mJ
开通损耗 (VCC = 800 V, ID = 500 A, RG = 5 Ω, VGS = -4 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C)	19 mJ

Diode

参数	价值
正向压降 (ID = -500 A, VGS = 18 V, Tj = 25°C)	1 V
反向恢复 (VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 30 nH, inductive load, Tj = 125°C)	7.7 mJ

Package

参数	价值
热阻 结点至流体 (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar)	0.11 K/W
模块自身杂散电感 (per switch)	8.5 nH

Dimension

参数	价值
电气间隙 (terminal to base and terminal to terminal)	4.5 mm
爬电距离 (terminal to base and terminal to terminal)	9.0 mm
重量	720 g

Outline drawing

外形图

电气图