                        Schematic IGBT manufacturing
                        IGBT cell processing at decisive process stages

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300 mm diameter

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Dimensions of the chip

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Fine Pattern Trench Cell with Field Stop Backside

Low conduction losses (V_CE,on)

Low switching losses (E_off and E_on)

Comparison

Tailoring the turn-on speed by the external gate resistor at nominal conditions

Incrementally increased current is safely turned-off until short circuit mode is reached beyond >2.6x nominal current

VCE

VGE

t (s)

T_case = 125°C, varying R_{g_on} = from 8 to 0.47 Ohm, L_s = 30 nH at nominal conditions

T_case = 175°C, R_{g_off} = 1.5 Ohm, L_s = 30 nH, I_C incrementally increased from 1500 A to 2100 A, V_CC = 800 V

Conclusion

Adjustable to your application specifics

Benefits of this solution:

Controllability in IGBT turn-on is achieved and enables our customers to tune this device to their application needs

Even at case temperatures exceeding the maximum limits of the datasheet the robustness is given.

Benefits of this solution:

Together with the IGBT we developed the accompanying free-wheeling diode enabling the best overall chip-set performance.