SCSD002HEEV120mS-赛晶半导体HEEV封装碳化硅功率半导体模块

技术规格

HEEV phase leg SiC module

HEEV-type

• SCSD002HEEV120mS

Maximum ratings

参数	价值
VDSS (at Tj = 25°C)	1200 V
VGSS	-10 to +22 V
最高运行结温	175 °C

MOSFET

MOSFET

参数	价值
rDSon (at Tj = 25°C)	2.05 mOhm
rDSon (at Tj = 150°C)	3.8 mOhm
关断损耗 (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C)	20 mJ
开通损耗 (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C)	13 mJ

Diode

参数	价值
正向压降 (ID = -500 A, VGS = 18 V, Tj = 25°C)	1 V
反向恢复(VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C)	10.9 mJ

Package

参数	价值
热阻 结点至流体 (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules)	0.110 K/W
模块自身杂散电感 (per switch)	4.5 nH

Mechanical Properties

参数	价值
电气间隙 (terminal to base and terminal to terminal)	7.1 mm
Clearance distance in air (terminal to terminal)	4.0 mm
爬电距离 (terminal to base and terminal to terminal)	8.0 mm
重量	65 g

Outline drawing

Outline

Schematic