Maximum ratings
| 参数 |
价值 |
| VDSS (at Tj = 25°C) |
1200 V |
| VGSS |
-10 to +22 V |
| 最高运行结温 |
175 °C |
MOSFET
| 参数 |
价值 |
| rDSon (at Tj = 25°C) |
2.05 mOhm |
| rDSon (at Tj = 150°C) |
3.8 mOhm |
| 关断损耗 (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) |
20 mJ |
| 开通损耗 (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) |
13 mJ |
Diode
| 参数 |
价值 |
| 正向压降 (ID = -500 A, VGS = 18 V, Tj = 25°C) |
1 V |
| 反向恢复(VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) |
10.9 mJ |
Package
| 参数 |
价值 |
| 热阻 结点至流体 (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules) |
0.110 K/W |
| 模块自身杂散电感 (per switch) |
4.5 nH |
Mechanical Properties
| 参数 |
价值 |
| 电气间隙 (terminal to base and terminal to terminal) |
7.1 mm |
| Clearance distance in air (terminal to terminal) |
4.0 mm |
| 爬电距离 (terminal to base and terminal to terminal) |
8.0 mm |
| 重量 |
65 g |
