HEEV-type

技术规格

HEEV phase leg SiC module

HEEV photo

HEEV-type

Maximum ratings

参数 价值
VDSS (at Tj = 25°C) 1200 V
VGSS -10 to +22 V
最高运行结温 175 °C
MOSFET

MOSFET

参数 价值
rDSon (at Tj = 25°C) 2.05 mOhm
rDSon (at Tj = 150°C) 3.8 mOhm
关断损耗 (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) 20 mJ
开通损耗 (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) 13 mJ
Diode

参数 价值
正向压降 (ID = -500 A, VGS = 18 V, Tj = 25°C) 1 V
反向恢复(VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) 10.9 mJ
Package

参数 价值
热阻 结点至流体 (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules) 0.110 K/W
模块自身杂散电感 (per switch) 4.5 nH
Mechanical Properties

参数 价值
电气间隙 (terminal to base and terminal to terminal) 7.1 mm
Clearance distance in air (terminal to terminal) 4.0 mm
爬电距离 (terminal to base and terminal to terminal) 8.0 mm
重量 65 g
Outline drawing

Outline

Outline drawing

Schematic

Outline drawing

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