SISD0450ST120i20-赛晶半导体ST封装功率模块

技术规格

ST-type phase leg IGBT module

ST-Type 1.2kV

• SISD0450ST120i20_A01
• SISD0250ST120i20_A01

Maximum ratings

参数	价值
集电极-发射极电压	1200 V
集电极直流电流	250 A
最高运行结温	175 °C​

IGBT

参数	价值
集电极-发射极饱和电压 (Tvj = 125°C)	1.93 V
关断损耗​ (VCC = 600 V, IC = 250 A, RG = 4.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	33 mJ
开通损耗​ (VCC = 600 V, IC = 250 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	36 mJ

Diode

参数	价值
正向压降 (Tvj = 125°C)	2.14 V
反向恢复 ​(VR = 600 V, IF = 250 A, dI/dt = 4700 A/µs, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	17 mJ

Package

参数	价值
IGBT结-壳热阻 Rth(j-c)_IGBT	0.120 K/W
二极管结-壳热阻 Rth(j-c)_Diode	0.204 K/W
IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch	0.057 K/W
二极管壳到散热器热阻 Rth(c-s)_Diode per switch	0.072 K/W

Dimension

参数	价值
长 x 宽 x 高	106 x 62 x 30.9 mm³
电气间隙-端子到基板​	23 mm
端子到基板-端子到端子	11 mm
爬电距离-端子到基板	29 mm
爬电距离-端子到基板	23 mm
重量	310 g

Outline drawing

Outline

Schematics