ST-Type

技术规格

ST-type phase leg IGBT module

Photo Lo Res 013
Maximum ratings

参数 价值
Collector-emitter voltage 1200 V
DC collector current​ 800 A
Max. junction operating temperature 175 °C​
IGBT

参数 价值
Collector emitter saturation voltage (Tvj = 125°C) 2 V
Turn-off energy​ (VCC = 600 V, IC = 800 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 120 mJ
Turn-on energy​ (VCC = 600 V, IC = 800 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 80 mJ
Diode

参数 价值
Forward voltage drop (Tvj = 125°C) 2.2 V
Reverse recovery ​(VR = 600 V, IF = 800 A, dI/dt = 5300 A/µs, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 50 mJ
Package

参数 价值
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT 0.042 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode 0.073 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch 0.028 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch 0.034 K/W
Dimension

参数 价值
L x W x H 106 x 62 x 30.9 mm³
Clearance distance terminal to base​ 23 mm
Clearance distance terminal to terminal​ 11 mm
Surface creepage distance terminal to base​ 29 mm
Surface creepage distance terminal to terminal​ 23 mm
Mass​ 350 g
Mechanical Properties

Outline drawing

Mechanical Properties
Outline drawing

Schematic circuit diagram

Outline drawing

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