SISD0800ST120i20-赛晶半导体ST封装模块

技术规格

ST-type phase leg IGBT module

ST-Type

• SISD0800ST120i20
• SISD0450ST120i20
• SISD0600ST170i20
• SISD0450ST170i20

Maximum ratings

参数	价值
集电极-发射极电压	1200 V
集电极直流电流	800 A
最高运行结温	175 °C​

IGBT

参数	价值
集电极-发射极饱和电压 (Tvj = 125°C)	2 V
关断损耗​ (VCC = 600 V, IC = 800 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	120 mJ
开通损耗​ (VCC = 600 V, IC = 800 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	80 mJ

Diode

参数	价值
正向压降 (Tvj = 125°C)	2.2 V
反向恢复 ​(VR = 600 V, IF = 800 A, dI/dt = 5300 A/µs, RG = 1.5 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	50 mJ

Package

参数	价值
IGBT结-壳热阻 Rth(j-c)_IGBT	0.042 K/W
二极管结-壳热阻 Rth(j-c)_Diode	0.073 K/W
IGBT壳到散热器热阻 Rth(c-s)_IGBT per switch	0.028 K/W
二极管壳到散热器热阻 Rth(c-s)_Diode per switch	0.034 K/W

Dimension

参数	价值
长 x 宽 x 高	106 x 62 x 30.9 mm³
电气间隙-端子到基板	23 mm
端子到基板-端子到端子	11 mm
爬电距离-端子到基板	29 mm
爬电距离-端子到基板	23 mm
重量	350 g

Mechanical Properties

外形图

Outline drawing

电气图