TF-type

技术规格

34mm封装半桥IGBT模块

  • i20超低损耗精细沟槽栅型IGBT芯片组
  • 高效Al2O3 绝缘陶瓷基板
  • 低热阻铜底板
  • 行业标准封装
TF pic
Maximum ratings

参数 价值
Collector-emitter voltage 1700 V
DC collector current 75 A
最高运行结温 175 °C
IGBT

参数 价值
集电极-发射极饱和电压 (IC = 75 A, VGE = 15 V, Tvj = 125°C) 1.92 V
关断损耗 (VCC = 900 V, IC = 75 A, RG = 2 Ω, VGS = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) 20 mJ
开通损耗 (VCC = 900 V, IC = 75 A, RG = 25 Ω, RG = 12 Ω, VGS = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) 25 mJ
Diode

参数 价值
正向压降 (ID = 75 A, Tj = 125°C) 1.8 V
反向恢复能量 (VR = 900 V, IF = 75 A, RG = 25 Ω HS, RG = 12 Ω LS, VGE = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) 15 mJ
Dimension

参数 价值
电气间隙 (terminal to base and terminal to terminal) 10 mm
爬电距离 (terminal to base and terminal to terminal) 10 mm
Surface creepage distance (terminal to terminal) 10 mm
重量 155 g
Outline drawing

Outline

Outline drawing

Schematics

Outline drawing