SISD0150TF170i20

34mm封装半桥IGBT模块

  • i20超低损耗精细沟槽栅型IGBT芯片组
  • 高效Al2O3 绝缘陶瓷基板
  • 低热阻铜底板
  • 行业标准封装
TF pic

TF-type

参数 价值
Collector-emitter voltage 1700 V
DC collector current 150 A
最高运行结温 175 °C
参数 价值
集电极-发射极饱和电压 (IC = 150 A, VGE = 15 V, Tvj = 125°C) 1.92 V
关断损耗 (VCC = 900 V, IC = 150 A, RG = 6.2 Ω, VGS = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) 46 mJ
开通损耗 (VCC = 900 V, IC = 150 A, RG = 12 Ω HS, RG = 6.2 LS Ω, VGS = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) 35 mJ
参数 价值
正向压降 (ID = 150 A, Tj = 125°C) 1.88 V
反向恢复能量 (VR = 900 V, IF = 150 A, RG = 12 Ω HS, RG = 6.2 Ω LS, VGE = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) 34 mJ
参数 价值
电气间隙 (terminal to base and terminal to terminal) 10 mm
爬电距离 (terminal to base and terminal to terminal) 10 mm
Surface creepage distance (terminal to terminal) 10 mm
重量 155 g

Outline

Outline drawing

Schematics

Outline drawing
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  • SISD0150TF170i20v1
    产品规格书
    2026-04-17 | 0.56MB | EN/CN
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  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-06-09 | 0.66MB | EN
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    ZIP文件
    2026-06-09 | 0.5MB
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