34mm封装半桥IGBT模块
| 参数 | 价值 |
|---|---|
| Collector-emitter voltage | 1700 V |
| DC collector current | 150 A |
| 最高运行结温 | 175 °C |
| 参数 | 价值 |
|---|---|
| 集电极-发射极饱和电压 (IC = 150 A, VGE = 15 V, Tvj = 125°C) | 1.92 V |
| 关断损耗 (VCC = 900 V, IC = 150 A, RG = 6.2 Ω, VGS = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) | 46 mJ |
| 开通损耗 (VCC = 900 V, IC = 150 A, RG = 12 Ω HS, RG = 6.2 LS Ω, VGS = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) | 35 mJ |
| 参数 | 价值 |
|---|---|
| 正向压降 (ID = 150 A, Tj = 125°C) | 1.88 V |
| 反向恢复能量 (VR = 900 V, IF = 150 A, RG = 12 Ω HS, RG = 6.2 Ω LS, VGE = ±15 V, Ls = 22 nH, inductive load, Tj = 125°C) | 34 mJ |
| 参数 | 价值 |
|---|---|
| 电气间隙 (terminal to base and terminal to terminal) | 10 mm |
| 爬电距离 (terminal to base and terminal to terminal) | 10 mm |
| Surface creepage distance (terminal to terminal) | 10 mm |
| 重量 | 155 g |
Outline
Schematics