Industrial ED-type standard package featuring i23 ultra-low loss micro pattern trench IGBT chipset for 1700V and twice 900A
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 1700 V |
| DC collector current | 900 A |
| Max. junction operating temperature | 175 °C |
| Parameter | Value |
|---|---|
| Collector emitter saturation voltage (Tvj = 125°C) | 2.0 V |
| Turn-off energy (VCC = 900 V, IC = 900 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 256 mJ |
| Turn-on energy (VCC = 900 V, IC = 900 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 232 mJ |
| Parameter | Value |
|---|---|
| Forward voltage drop (Tvj = 125°C) | 2.25 V |
| Reverse recovery (VR = 900 V, IF = 900 A, dI/dt = 9900 A/µs (175°C), RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 144 mJ |
| Parameter | Value |
|---|---|
| IGBT thermal resistance junction to case Rth(j-c)_IGBT | 0.041 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode | 0.069 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch | 0.030 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch | 0.036 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 152 x 62 x 17 mm³ |
| Clearance distance terminal to base | 12.5 mm |
| Clearance distance terminal to terminal | 10 mm |
| Surface creepage distance terminal to base | 15 mm |
| Surface creepage distance terminal to terminal | 13 mm |
| Mass | 350 g |
Outline
Schematics
