Industrial FP-type package featuring i23 ultra-low loss micro pattern trench IGBT chipset for 1050V
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 1050 V |
| Implemented DC collector current T1 - T4 | 650 A |
| Max. junction operating temperature | 175 °C |
| Parameter | Value |
|---|---|
| IGBT thermal resistance junction to case Rth(j-c)_IGBT T1 - T4 | 0.074 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode D1 - D4 | 0.178 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode D5 & D6 | 0.136 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch T1 - T4 | 0.030 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch D1 - D4 | 0.045 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch D5 & D6 | 0.037 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 113 x 62 x 17.3 mm³ |
| Mass | 250 g |
Outline
Schematics
