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SIS0200C120i21 SwissSEM IGBT die for power module assembly

1200V and 200A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0200C120i21

Silicon IGBT 1200 V and 200 A rated current with i21-Technology

i21 delivered on 300 mm wafer

I20 21

IGBT 1.2kV i20 & i21

Parameter Value
Collector-emitter voltage 1200 V
DC collector current​ 200 A
Parameter Value
Length 12.8 mm
Width 12.1 mm
DOWNLOADS
  • SIS0200C120i21
    Datasheet
    2026-04-17 | 0.34MB | EN/CN
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  • Product Naming Rule Public Article Number directive
    Product Naming Rule Public Article Number directive
    2026-04-17 | 0.66MB | EN
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    ZIP-File
    2026-06-05 | 0MB
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