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SIS0200C175i20 SwissSEM IGBT die for power module assembly

1700V and 200A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0200C175i20

Silicon IGBT 1750 V and 200 A rated current

I20 21

IGBT 1.7kV

Parameter	Value
Collector-emitter voltage	1700 V
DC collector current	200 A

Parameter	Value
Length	12.1 mm
Width	15.78 mm

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SIS0200C175i20

Datasheet

2026-04-17 | 0.29MB | EN/CN

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Product Naming Rule Public Article Number directive

Product Naming Rule Public Article Number directive

2026-04-17 | 0.66MB | EN

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ZIP-File

2026-05-18 | 0.88MB

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