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SCS0012C120m24 SwissSEM SiC-MOSFET die for power module assembly

1200V and 12 mOhm rated SiC-MOSFET die with m24-technology

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SCS0012C120m24

SiC MOSFET 1200 V and 12 mOhm Rdson

  • positive temperature coefficient
  • easy paralleling
Si C MOSFET wafer 150

SiC MOSFET 1.2kV

MOSFET

Parameter Value
Drain-source voltage 1200 V
RDS(on) (ID = 100 A, VGS = 18 V, Tvj = 25°C) 12 mOhm
Parameter Value
Length 5.0 mm
Width 5.7 mm

Outline drawing

Outline drawing
DOWNLOADS
  • SCS0012C120m24v2
    Datasheet
    2026-06-04 | 0.34MB | EN
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  • SCS0012C120m24v2
    产品规格书
    2026-06-04 | 0.45MB | EN/CN
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    ZIP-File
    2026-06-04 | 0MB
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