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SIS0075C175i20 SwissSEM IGBT die for power module assembly

1700V and 75A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0075C175i20

Silicon IGBT 1750 V and 75 A rated current

20 ultra-low loss fine pattern Trench IGBT chipset i20
positive temperature coefficient
easy par

I20 21

IGBT 1.7kV

Parameter	Value
Collector-emitter voltage	1700 V
DC collector current	75 A

Parameter	Value
Length	8.9 mm
Width	8.9 mm

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SIS0075C175i20v3

Datasheet

2026-06-07 | 0.3MB | EN/CN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-06-19 | 0.66MB

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ZIP-File

2026-06-19 | 0.89MB

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