Sustainability
Sustainability
SwissSEM
SwissSEM
Milestones
Milestones
Downloads Inquiry

SIS0250C230i26 SwissSEM IGBT die for power module assembly

2300V and 250A rated IGBT-die with i20-technology featuring a fine pattern trench cell

Downloads Inquiry

SIS0250C230i26

Silicon IGBT 2300 V and 250 A rated current

  • i26 ultra-low loss micro pattern Trench IGBT
  • Soft switching for broad application range due to best turn-off controllability
  • positive temperature coefficient
  • easy paralleling
I20 21

IGBT 2.3kV i26 technology

Parameter Value
Collector-emitter voltage 2300 V
DC collector current​ 250 A
Parameter Value
Length 12.4 mm
Width 16.4 mm

Outline drawing

Outline drawing
DOWNLOADS
  • SIS0250C230i26v1
    Datasheet
    2026-07-10 | 0.35MB | EN
    URL copied to clipboard
  • AN 000011 L Product Naming Rule Public Article Number directive
    2026-07-10 | 0.66MB
    URL copied to clipboard
  • SIS0250C230i26v1
    Datasheet
    2026-07-10 | 0.43MB | EN/CN
    URL copied to clipboard
  • Download all
    ZIP-File
    2026-07-10 | 1.31MB
    URL copied to clipboard

This website uses cookies.