SISS0500BEVD120i20 - SwissSEM IGBT three-phase power module for automotive applications

Tech-Specs

BEVD-Type three-phase 1.2kV IGBT module

• i20 ultra-low loss fine pattern Trench IGBT chipset
• Baseplate isolation with efficient Si₃N₄ AMB
• Cu baseplate for low thermal resistance
• Automotive package
• RoHS and REACH compliant

BEVD-type

• SISS0500BEVD120i20

Maximum ratings

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current	500 A
Max. junction operating temperature	175 °C

IGBT

Parameter	Value
Collector emitter saturation voltage (at Tj = 125°C)	1.95 V
Turn-off switching energy (VCC = 600 V, ID = 500 A, RG = 2 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C)	70 mJ
Turn-on switching energy (VCC = 600 V, ID = 500 A, RG = 1 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C)	56 mJ

Diode

Parameter	Value
Forward voltage (IF = 500 A, Tj = 125°C)	2.15 V
Reverse recovery energy (Erec = 600 V, IF = 500 A, dI/dt = 8.34 kA/µs (175°C), RG = 1 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C)	37 mJ

Package Properties

Parameter	Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar)	0.11 K/W
Module stray inductance (per switch)	12 nH

Dimensions

Parameter	Value
Clearance distance in air (terminal to base and terminal to terminal)	4.5 mm
Surface creepage distance (terminal to base and terminal to terminal)	9.0 mm
Mass	700 g

Outline drawing

Outline

Schematics