SISS0500BEVD120i20

BEVD-Type three-phase 1.2kV IGBT module

  • i20 ultra-low loss fine pattern Trench IGBT chipset
  • Baseplate isolation with efficient Si3N4 AMB
  • Cu baseplate for low thermal resistance
  • Automotive package
  • RoHS and REACH compliant
BEVD pic

BEVD-type

Parameter Value
Collector-emitter voltage 1200 V
DC collector current 500 A
Max. junction operating temperature 175 °C
Parameter Value
Collector emitter saturation voltage (at Tj = 125°C) 1.95 V
Turn-off switching energy (VCC = 600 V, ID = 500 A, RG = 2 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C) 70 mJ
Turn-on switching energy (VCC = 600 V, ID = 500 A, RG = 1 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C) 56 mJ
Parameter Value
Forward voltage (IF = 500 A, Tj = 125°C) 2.15 V
Reverse recovery energy (Erec = 600 V, IF = 500 A, dI/dt = 8.34 kA/µs (175°C), RG = 1 Ω, VGE = ±15 V, Ls = 30 nH, inductive load, Tj = 125°C) 37 mJ
Parameter Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar) 0.11 K/W
Module stray inductance (per switch) 12 nH
Parameter Value
Clearance distance in air (terminal to base and terminal to terminal) 4.5 mm
Surface creepage distance (terminal to base and terminal to terminal) 9.0 mm
Mass 700 g

Outline

Outline drawing

Schematics

Outline drawing
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  • SISS0500BEVD120i20v1
    Datasheet
    2026-06-19 | 0.62MB | EN/CN
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