SISD0450ED120i20_A01 - SwissSEM IGBT power module - dual / phase-leg

Tech-Specs

ED-type phase leg IGBT module

i20 ultra-low loss fine pattern Trench IGBT chipset Baseplate isolation with reinforced Al2O3 ceramic Cu baseplate for low thermal resistance Improved Package with reduced internal impedance and terminal heating

ED-Type 1.2kV i20

• SISD0750ED120i20
• SISD0750ED120i20_A01
• SISD0600ED120i20
• SISD0600ED120i20_A01
• SISD0450ED120i20
• SISD0450ED120i20_A01

Maximum ratings

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current​	450 A
Max. junction operating temperature​	175 °C

IGBT

Parameter	Value
Collector emitter saturation voltage (at Tvj = 125°C)	1.8 V
Turn-off energy​ (VCC = 600 V, IC = 450 A, RG = 2 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	65 mJ
Turn-on energy​ (VCC = 600 V, IC = 450 A, RG = 1 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	54 mJ

Diode

Parameter	Value
Forward voltage drop (Tvj = 125°C)	2.05 V
Reverse recovery ​energy ​(VR = 600 V, IF = 450 A, dI/dt = 3500 A/µs, RG = 1 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	24 mJ

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT	0.057 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode	0.098 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch	0.032 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch	0.039 K/W

Dimensions

Parameter	Value
L x W x H	152 x 62 x 17 mm³
Clearance distance terminal to base​	12.5 mm​
Clearance distance terminal to terminal​	10 mm​
Surface creepage distance terminal to base​	15 mm​
Surface creepage distance terminal to terminal​	13 mm​
Mass​	350 g

Outline drawing

Outline drawing

Schematics