Industrial ED-type standard package featuring i21 ultra-low loss fine pattern trench IGBT chipset for 1200V and twice 600A
|
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 1200 V |
| DC collector current | 600 A |
| Max. junction operating temperature | 175 °C |
| Parameter | Value |
|---|---|
| Collector emitter saturation voltage (Tvj = 125°C) | 1.68 V |
| Turn-off energy (VCC = 600 V, IC = 600 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 120 mJ |
| Turn-on energy (VCC = 600 V, IC = 600 A, RG = 1.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 76 mJ |
| Parameter | Value |
|---|---|
| Forward voltage drop (Tvj = 125°C) | 1.95 V |
| Reverse recovery (VR = 600 V, IF = 600 A, dI/dt = 7700 A/µs (175°C), RG = 1.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 40 mJ |
| Parameter | Value |
|---|---|
| IGBT thermal resistance junction to case Rth(j-c)_IGBT | 0.051 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode | 0.069 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch | 0.032 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch | 0.036 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 152 x 62 x 17 mm³ |
| Clearance distance terminal to base | 12.5 mm |
| Clearance distance terminal to terminal | 10 mm |
| Surface creepage distance terminal to base | 15 mm |
| Surface creepage distance terminal to terminal | 13 mm |
| Mass | 350 g |
Outline drawing
Schematics
