SISD0600ED120i23_D01 - SwissSEM IGBT power module

Industrial standard package featuring i23 ultra low-loss micro-pattern Trench IGBT chipset for 1200V and 600A

Tech-Specs

ED-type phase leg IGBT module

i23 ultra-low loss micro pattern Trench IGBT chipset
Baseplate isolation with reinforced Al₂O₃ ceramic
Cu baseplate for low thermal resistance
Improved Package with reduced internal impedance and terminal heating
Enhanced diode performance for regenerative power flow

SISD0900 ED120i23 photo

ED-Type 1.2kV i23

Maximum ratings

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current	600 A
Max. junction operating temperature	175 °C

IGBT

Parameter	Value
Collector emitter saturation voltage (T_vj = 125°C)	1.75 V
Turn-off energy (V_CC = 600 V, I_C = 600 A, R_G = 0.5 Ω, V_GE = ± 15 V, L_s = 35 nH, inductive load, T_vj = 125°C)	75 mJ
Turn-on energy (V_CC = 600 V, I_C = 600 A, R_G = 0.5 Ω, V_GE = ± 15 V, L_s = 35 nH, inductive load, T_vj = 125°C)	80 mJ

Diode

Parameter	Value
Forward voltage drop (T_vj = 125°C)	1.45 V
Reverse recovery (V_R = 600 V, I_F = 600 A, dI/dt = 8100 A/µs, R_G = 0.5 Ω, V_GE = ± 15 V, L_s = 35 nH, inductive load, T_vj = 125°C)	55 mJ

Package Properties

Parameter	Value
IGBT thermal resistance junction to case R_{th(j-c)_IGBT}	0.054 K/W
Diode thermal resistance junction to case R_{th(j-c)_Diode}	0.062 K/W
IGBT thermal resistance case to heatsink R_{th(c-s)_IGBT} per switch	0.033 K/W
Diode thermal resistance case to heatsink R_{th(c-s)_Diode} per switch	0.036 K/W

Dimensions

Parameter	Value
L x W x H	152 x 62 x 17 mm³
Clearance distance terminal to base	12.5 mm
Clearance distance terminal to terminal	10 mm
Surface creepage distance terminal to base	15 mm
Surface creepage distance terminal to terminal	13 mm
Mass	350 g

Outline drawing

Outline

Outline drawing

Schematics

Outline drawing