SISD0900ED120i20 - SwissSEM IGBT power module

Tech-Specs

ED-type phase leg IGBT module

• i23 ultra-low loss micro pattern Trench IGBT chipset
• Baseplate isolation with reinforced Al2O3 ceramic
• Cu baseplate for low thermal resistance
• Industry standard package with reduced internal impedance

ED-Type 1.2kV i23

• SISD0900ED120i23

Maximum ratings

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current​	900 A
Max. junction operating temperature​	175 °C​

IGBT

Parameter	Value
Collector emitter saturation voltage (Tvj = 125°C)	1.75 V
Turn-off energy​ (VCC = 600 V, IC = 900 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	122 mJ​
Turn-on energy​ (VCC = 600 V, IC = 900 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	127 mJ​

Diode

Parameter	Value
Forward voltage drop (Tvj = 125°C)	1.75 V​
Reverse recovery ​(VR = 600 V, IF = 750 A, dI/dt = 5300 A/µs, RG = 0.47 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C)	70 mJ

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT	0.04 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode	0.062 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch	0.03 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch	0.036 K/W

Dimensions

Parameter	Value
L x W x H	152 x 62 x 17 mm³
Clearance distance terminal to base​	12.5 mm​
Clearance distance terminal to terminal​	10 mm​
Surface creepage distance terminal to base​	15 mm​
Surface creepage distance terminal to terminal​	13 mm​
Mass​	350 g

Outline drawing

Outline

Schematics