Maximum ratings
| Parameter |
Value |
| Collector-emitter voltage |
1200 V |
| DC collector current |
450 A |
| Max. junction operating temperature |
175 °C |
IGBT
| Parameter |
Value |
| Collector emitter saturation voltage (at Tvj = 175°C) |
1.95 V |
| Turn-off energy (VCC = 600 V, IC = 450 A, RG = 2 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) |
65 mJ |
| Turn-on energy (VCC = 600 V, IC = 450 A, RG = 1 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) |
54 mJ |
Diode
| Parameter |
Value |
| Forward voltage drop (Tvj = 125°C) |
2.05 V |
| Reverse recovery energy (VR = 600 V, IF = 450 A, dI/dt = 3500 A/µs, RG = 1 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) |
24 mJ |
Package Properties
| Parameter |
Value |
| IGBT thermal resistance junction to case Rth(j-c)_IGBT |
0.057 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode |
0.098 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch |
0.032 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch |
0.039 K/W |
Dimensions
| Parameter |
Value |
| L x W x H |
152 x 62 x 17 mm³ |
| Clearance distance terminal to base |
12.5 mm |
| Clearance distance terminal to terminal |
10 mm |
| Surface creepage distance terminal to base |
14.5 mm |
| Surface creepage distance terminal to terminal |
13 mm |
| Mass |
350 g |
