ED-Type

Tech-Specs

ED-type phase leg IGBT module

SISD0500 ED120i20 iso View Photo Lo Res 003
Maximum ratings

Parameter Value
Collector-emitter voltage 1200 V
DC collector current​ 450 A
Max. junction operating temperature​ 175 °C
IGBT

Parameter Value
Collector emitter saturation voltage (at Tvj = 175°C) 1.95 V
Turn-off energy​ (VCC = 600 V, IC = 450 A, RG = 2 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 65 mJ
Turn-on energy​ (VCC = 600 V, IC = 450 A, RG = 1 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 54 mJ
Diode

Parameter Value
Forward voltage drop (Tvj = 125°C) 2.05 V
Reverse recovery ​energy ​(VR = 600 V, IF = 450 A, dI/dt = 3500 A/µs, RG = 1 Ω, VGE = ± 15 V, Ls = 30 nH, inductive load, Tvj = 125°C) 24 mJ
Package Properties

Parameter Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT 0.057 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode 0.098 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch 0.032 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch 0.039 K/W
Dimensions

Parameter Value
L x W x H 152 x 62 x 17 mm³
Clearance distance terminal to base​ 12.5 mm​
Clearance distance terminal to terminal​ 10 mm​
Surface creepage distance terminal to base​ 14.5 mm​
Surface creepage distance terminal to terminal​ 13 mm​
Mass​ 350 g
Outline drawing

Outline drawing

Outline drawing

Schematic circuit diagram

Outline drawing

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