Maximum ratings
| Parameter |
Value |
| Collector-emitter voltage |
1700 V |
| DC collector current |
100 A |
| Max. junction operating temperature |
175 °C |
IGBT
| Parameter |
Value |
| Collector emitter saturation voltage (Tvj = 125°C) |
1.85 V |
| Turn-off energy (VCC = 900 V, IC = 100 A, RG = 4.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) |
39 mJ |
| Turn-on energy (VCC = 900 V, IC = 100 A, RG_A1 = 11 Ω, RG_A2 = 6.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) |
94 mJ |
Diode
| Parameter |
Value |
| Forward voltage drop (Tvj = 125°C) |
1.85 V |
| Reverse recovery (VR = 900 V, IF = 100 A, RG_A1 = 11 Ω, RG_A2 = 6.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) |
23 mJ |
| Diode rectifier - Forward voltage drop (IF = 150 A, Tvj = 125°C) |
1.02 V |
Package Properties
| Parameter |
Value |
| IGBT thermal resistance junction to case Rth(j-c)_IGBT |
0.200 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode |
0.320 K/W |
| Rectifier thermal resistance junction to case Rth(j-c)_RectifierDiode |
0.280 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch |
0.089 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch |
0.099 K/W |
| Rectifier thermal resistance case to heatsink Rth(c-s)_Rectifier |
0.159 K/W |
Dimensions
| Parameter |
Value |
| L x W x H |
122 x 62.5 x 17 mm³ |
| Clearance distance terminal to base |
10 mm |
| Clearance distance terminal to terminal |
10 mm |
| Surface creepage distance terminal to base |
7.5 mm |
| Surface creepage distance terminal to terminal |
10 mm |
| Mass |
300 g |
