Industrial EP-type standard package featuring i20 ultra-low loss fine pattern trench IGBT chipset for 1700V
| Parameter | Value |
|---|---|
| Collector-emitter voltage | 1700 V |
| DC collector current | 100 A |
| Max. junction operating temperature | 175 °C |
| Parameter | Value |
|---|---|
| Collector emitter saturation voltage (Tvj = 125°C) | 1.85 V |
| Turn-off energy (VCC = 900 V, IC = 100 A, RG = 4.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) | 39 mJ |
| Turn-on energy (VCC = 900 V, IC = 100 A, RG_A1 = 11 Ω, RG_A2 = 6.5 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C) | 94 mJ |
| Parameter | Value |
|---|---|
| Forward voltage drop (Tvj = 125°C) | 1.85 V |
| Reverse recovery (VR = 900 V, IF = 100 A, RG_A1 = 11 Ω, RG_A2 = 6.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C) | 23 mJ |
| Diode rectifier - Forward voltage drop (IF = 150 A, Tvj = 125°C) | 1.02 V |
| Parameter | Value |
|---|---|
| IGBT thermal resistance junction to case Rth(j-c)_IGBT | 0.200 K/W |
| Diode thermal resistance junction to case Rth(j-c)_Diode | 0.320 K/W |
| Rectifier thermal resistance junction to case Rth(j-c)_RectifierDiode | 0.280 K/W |
| IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch | 0.089 K/W |
| Diode thermal resistance case to heatsink Rth(c-s)_Diode per switch | 0.099 K/W |
| Rectifier thermal resistance case to heatsink Rth(c-s)_Rectifier | 0.159 K/W |
| Parameter | Value |
|---|---|
| L x W x H | 122 x 62.5 x 17 mm³ |
| Clearance distance terminal to base | 10 mm |
| Clearance distance terminal to terminal | 10 mm |
| Surface creepage distance terminal to base | 7.5 mm |
| Surface creepage distance terminal to terminal | 10 mm |
| Mass | 300 g |
Outline
Schematics
