SISP0200EP170i20 - SwissSEM EP-type H-bridge IGBT power module

Tech-Specs

EP-type H-bridge IGBT power module with rectifier diode

• i20 ultra-low loss fine pattern Trench IGBT chipset
• PIM with H-bridge and input rectifier
• Baseplate isolation with efficient Al2O3 ceramic
• Cu baseplate for low thermal resistance
• Industry standard package

EP-Type 1.7kV

• SISP0200EP170i20
• SISP0150EP170i20
• SISP0100EP170i20
• SISP0075EP170i20

Maximum ratings

Parameter	Value
Collector-emitter voltage	1700 V
DC collector current​	200 A
Max. junction operating temperature	175 °C​

IGBT

Parameter	Value
Collector emitter saturation voltage (Tvj = 125°C)	1.85 V
Turn-off energy​ (VCC = 900 V, IC = 200 A, RG = 3 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C)	55 mJ
Turn-on energy​ (VCC = 900 V, IC = 200 A, RG_LS = 5 Ω, RG_HS = 2 Ω, VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C)	82 mJ

Diode

Parameter	Value
Forward voltage drop (Tvj = 125°C)	1.85 V
Reverse recovery ​(VR = 900 V, IF = 200 A, RG = 5 Ω (LS switch), RG = 2 Ω (HS switch), VGE = ± 15 V, Ls = 90 nH, inductive load, Tvj = 125°C)	42 mJ
Diode rectifier - Forward voltage drop (IF = 150 A, Tvj = 125°C)	1.02 V

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT	0.120 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode	0.210 K/W
Rectifier thermal resistance junction to case Rth(j-c)_RectifierDiode	0.250 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch	0.073 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch	0.083 K/W
Rectifier thermal resistance ​case to heatsink Rth(c-s)_Rectifier	0.143 K/W

Dimensions

Parameter	Value
L x W x H	122 x 62.5 x 17 mm³
Clearance distance terminal to base​	10 mm
Clearance distance terminal to terminal​	10 mm
Surface creepage distance terminal to base​	7.5 mm
Surface creepage distance terminal to terminal​	10 mm
Mass​	300 g

Outline drawing

Outline

Schematics