EVD-type

Tech-Specs

EVD-Type three-phase 1.2kV SiC module

  • 3rd generation SiC MOSFET chips
  • Ultra-low rDSon
  • Low switching losses, Qg and Crss
  • Low inductance module < 9nH
  • Tvj_op = 175°C
  • 4.2kV DC 1 sec insulation
  • Compact design
  • Directly cooled PinFin baseplate
  • High performance Si3N4 ceramic substrates
  • Guiding elements for PCB and cooler assembly
  • Intergrated NTC temperature sensor
  • Press-fit contact technology
  • RoHS and REACH compliant
Black white BG

EVD-type

Maximum ratings

Parameter Value
VDSS (at Tj = 25°C) 1200 V
VGSS -10 to +22 V
Max. junction operating temperature 175 °C
MOSFET

MOSFET

Parameter Value
rDSon (at Tj = 25°C) 2.1 mOhm
rDSon (at Tj = 175°C) 3.8 mOhm
Turn-off switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 150°C) 19 mJ
Turn-on switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 150°C) 17 mJ
Diode

Parameter Value
Forward voltage (ID = -500 A, VGS = 18 V, Tj = 25°C) 1 V
Peak reverse recovery current (VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 125°C) 7.7 mJ
Package Properties

Parameter Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar) 0.11 K/W
Module stray inductance (per switch) 8.5 nH
Dimensions

Parameter Value
Clearance distance in air (terminal to base and terminal to terminal) 4.5 mm
Surface creepage distance (terminal to base and terminal to terminal) 9.0 mm
Mass 720 g
Outline drawing

Outline drawing

Outline drawing

Schematic circuit diagram

Outline drawing

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