SISS0600EVD120i25 - SwissSEM Si-IGBT three-phase power module for automotive applications

Tech-Specs

EVD-Type three-phase 1.2kV Si-IGBT automotive power-module

• i25 generation Si-IGBT chips
• Low switching losses
• Low inductance module < 9nH
• T_{vj_op} = 175°C
• 4.2kV DC 1 sec insulation
• Compact design
• Direct cooled PinFin baseplate
• High performance Si₃N₄ ceramic substrates
• Guiding elements for PCB and cooler assembly
• Integrated NTC temperature sensor
• Solder pin to PCB contact technology
• RoHS & REACH compliant

EVD-type

• SCSS002EVD120mS
• SISS0600EVD120i25

Maximum ratings

Parameter	Value
VCES (at Tj = 25°C)	1200 V
Max. junction operating temperature	175 °C

IGBT

Parameter	Value
VCEsat at Tvj = 150 °C	1.6 V
Eoff (at VCC = 600 V, IC = 600 A, RG = TBD, VGE = 15 V, Ls = 35 inductive load, Tj = 150°C)	59 mJ
Eon (at VCC = 600 V, IC = 600 A, RG = TBD, VGE = 15 V, Ls = 35 inductive load, Tj = 150°C)	49 mJ

Diode

Parameter	Value
Forward voltage VF (IF = 450A, Tvj = 150 °C)	1.9 V
Erec (at VCC = 600 V, IC = 600 A, RG = TBD, VGE = 15 V, Ls = 35 inductive load, Tj = 150°C)	32 mJ

Package Properties

Parameter	Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar)	0.11 K/W
Module stray inductance (per switch)	8.5 nH

Dimensions

Parameter	Value
Clearance distance in air (terminal to base and terminal to terminal)	4.5 mm
Surface creepage distance (terminal to base and terminal to terminal)	9.0 mm
Mass	720 g

Outline drawing

Outline

Schematics