SIST0650FP105i23 - SwissSEM FP-type three-level IGBT power module

Tech-Specs

FP-type three-level IGBT power module

• i23 ultra-low loss micro pattern Trench IGBT chipset
• Baseplate isolation with efficient Al₂O₃ ceramic
• Cu baseplate for low thermal resistance
• Industry standard package
• For solar power and 3-level-applications

FP-Type 1.05kV

• SIST0650FP105i23

Maximum ratings

Parameter	Value
Collector-emitter voltage	1050 V
Implemented DC collector current​ T1 - T4	650 A
Max. junction operating temperature	175 °C​

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT T1 - T4	0.074 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode D1 - D4	0.178 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode D5 & D6	0.136 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch T1 - T4	0.030 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch D1 - D4	0.045 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch D5 & D6	0.037 K/W

Dimensions

Parameter	Value
L x W x H	113 x 62 x 17.3 mm³
Mass​	250 g

Outline drawing

Outline

Schematics