HEEV-type

Tech-Specs

HEEV phase leg SiC module

HEEV-type

Maximum ratings

Parameter Value
VDSS (at Tj = 25°C) 1200 V
VGSS -10 to +22 V
Max. junction operating temperature 175 °C
MOSFET

MOSFET

Parameter Value
rDSon (at Tj = 25°C) 2.1 mOhm
rDSon (at Tj = 150°C) 3.8 mOhm
Turn-off switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) 19 mJ
Turn-on switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) 17 mJ
Diode

Parameter Value
Forward voltage (ID = -500 A, VGS = 18 V, Tj = 25°C) 1 V
Peak reverse recovery current (VR = 800 V, ISD = 500 A, dI/dt = 14 kA/µs, RG = 3 Ω, VGS = -2 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) 7.7 mJ
Package Properties

Parameter Value
Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules) 0.125 K/W
Module stray inductance (per switch) 4.5 nH
Mechanical Properties

Parameter Value
Clearance distance in air (terminal to base and terminal to terminal) 7.1 mm
Surface creepage distance (terminal to base and terminal to terminal) 8.0 mm
Mass 200 g

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