Transfer molded 1200V SiC-MOSFET single phase-leg module with 2 mOhm on-resistance and ultra-compact direct water-cooled design
| Parameter | Value |
|---|---|
| VDSS (at Tj = 25°C) | 1200 V |
| VGSS | -10 to +22 V |
| Max. junction operating temperature | 175 °C |
MOSFET
| Parameter | Value |
|---|---|
| rDSon (at Tj = 25°C) | 2.05 mOhm |
| rDSon (at Tj = 150°C) | 3.8 mOhm |
| Turn-off switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -4 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) | 20 mJ |
| Turn-on switching energy (VCC = 800 V, ID = 520 A, RG = 3 Ω, VGS = -4 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) | 13 mJ |
| Parameter | Value |
|---|---|
| Forward voltage (ID = -500 A, VGS = 18 V, Tj = 25°C) | 1 V |
| Peak reverse recovery current (VR = 800 V, ISD = 500 A, dI/dt = 15 kA/µs, RG = 3 Ω, VGS = -4 / +18 V, Ls = 20 nH, inductive load, Tj = 175°C) | 10.9 mJ |
| Parameter | Value |
|---|---|
| Thermal resistance junction to fluid (Per switch, Coolant 50% glycol, 50% water, 10 l/min, dp < 90 mbar, three modules) | 0.110 K/W |
| Module stray inductance (per switch) | 4.5 nH |
| Parameter | Value |
|---|---|
| Clearance distance in air (terminal to base) | 7.1 mm |
| Clearance distance in air (terminal to terminal) | 4.0 mm |
| Surface creepage distance (terminal to base and terminal to terminal) | 8.0 mm |
| Mass | 65 g |
Outline
Schematic
