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SIS0200C120i21 SwissSEM IGBT die for power module assembly

1200V and 200A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0200C120i21

Silicon IGBT 1200 V and 200 A rated current with i21-Technology

i21 ultra-low loss fine pattern Trench IGBT chipset
Optimized for switching at high stray inductance
positive temperature coefficient
easy paralleling

I20 21

IGBT 1.2kV i20 & i21

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current	200 A

Parameter	Value
Length	12.8 mm
Width	12.1 mm

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SIS0200C120i21v2

Datasheet

2026-06-19 | 0.3MB | EN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-06-19 | 0.66MB

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SIS0200C120i21v2

Datasheet

2026-06-19 | 0.37MB | EN/CN

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ZIP-File

2026-06-19 | 1.21MB

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