SIS0300C120i23 SwissSEM IGBT die for power module assembly

Tech-Specs

Silicon IGBT 1200 V and 300 A rated current

• i23 ultra-low-loss micro pattern Trench IGBT chipset
• Soft switching for a broad application range due to best turn-off controllability
• positive temperature coefficient
• easy paralleling

IGBT 1.2kV i23-technology

• SIS0300C120i23
• SIS0200C120i23
• SIS0150C120i23

IGBT

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current​	300 A

Dimensions

Parameter	Value
Length	12.1 mm
Width	15.7 mm

Outline drawing

Dimensions