SIS0200C120i21 SwissSEM IGBT die for power module assembly

Tech-Specs

Silicon IGBT 1200 V and 250 A rated current with i21-Technology

i21 delivered on 300 mm wafer

IGBT 1.2kV

• SIS0300C120i23
• SIS0250C120i20
• SIS0200C120i20
• SIS0150C120i20
• SIS0100C120i20
• SIS0200C120i21

IGBT

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current​	200 A

Dimensions

Parameter	Value
Length	12.8 mm
Width	12.02 mm