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SIS0100C175i20 SwissSEM IGBT die for power module assembly

1700V and 100A rated IGBT-die with i20-technology featuring a fine pattern trench cell

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SIS0100C175i20

Silicon IGBT 1750 V and 100 A rated current

i20 ultra-low loss fine pattern Trench IGBT chipset i20
positive temperature coefficient
easy paralleling

I20 21

IGBT 1.7kV

Parameter	Value
Collector-emitter voltage	1700 V
DC collector current	100 A

Parameter	Value
Length	10.1 mm
Width	10.1 mm

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SIS0100C175i20v3

Datasheet

2026-06-07 | 0.23MB | EN

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AN 000011 L Product Naming Rule Public Article Number directive

2026-06-19 | 0.66MB

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SIS0100C175i20v3

Datasheet

2026-06-05 | 0.3MB | EN/CN

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ZIP-File

2026-06-19 | 1.09MB

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