SCS0012C120m24 SwissSEM SiC-MOSFET die for power module assembly

Tech-Specs

SiC MOSFET 1200 V and 12 mOhm Rdson

• positive temperature coefficient
• easy paralleling

SiC MOSFET 1.2kV

• SCS0012C120m24
• SCS0013C120m23

MOSFET

MOSFET

Parameter	Value
Drain-source voltage	1200 V
RDS(on) (ID = 100 A, VGS = 18 V, Tvj = 25°C)	12 mOhm

Dimensions

Parameter	Value
Length	5.0 mm
Width	5.7 mm

Outline drawing

Outline drawing