SiC MOSFET 1.2kV

Tech-Specs

SiC MOSFET 1200 V and 13 mOhm Rdson

Si C MOSFET wfr 150

SiC MOSFET 1.2kV

MOSFET

MOSFET

Parameter Value
Drain-source voltage 1200 V
RDS(on) (ID = 100 A, VGS = 18 V, Tvj = 25°C 13 mOhm
Dimensions

Parameter Value
Length 5.0 mm
Width 5.7 mm
Outline drawing

Outline drawing

Outline drawing

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