SiC MOSFET 1.4kV

Tech-Specs

SiC MOSFET 1400 V and 15 mOhm Rdson

  • positive temperature coefficient
  • easy paralleling
Si C MOSFET wafer

SiC MOSFET 1.4kV

MOSFET

MOSFET

Parameter Value
Drain-source voltage 1400 V
RDS(on) (ID = 100 A, VGS = 18 V, Tvj = 25°C) 15 mOhm
Dimensions

Parameter Value
Length 5.0 mm
Width 5.7 mm
Outline drawing

Outline drawing

Outline drawing

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