SCS0009C075m22 SwissSEM SiC-MOSFET die for power module assembly

Tech-Specs

SiC MOSFET 750 V and 9 mOhm Rdson

• positive temperature coefficient
• easy paralleling

SiC MOSFET 750V

• SCS0009C075m22

MOSFET

MOSFET

Parameter	Value
Drain-source voltage	750 V
RDS(on) (ID = 80 A, VGS = 18 V, Tvj = 25°C)	9 mOhm

Dimensions

Parameter	Value
Length	5 mm
Width	5 mm

Outline drawing

Outline drawing