SISD1000ST120i23_A01 - SwissSEM IGBT power module - dual / phase-leg

Tech-Specs

ST-type phase leg IGBT module

• i20 ultra-low loss fine pattern Trench IGBT chipset
• Baseplate isolation with efficient Al₂O₃ ceramic
• Cu baseplate for low thermal resistance
• Industry standard package 

ST-Type 1.2kV i23

• SISD1000ST120i23_A01
• SISD0600ST120i23_A01
• SISD0300ST120i23_A02

Maximum ratings

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current​	1000 A
Max. junction operating temperature	175 °C​

IGBT

Parameter	Value
Collector emitter saturation voltage (Tvj = 125°C)	1.75 V
Turn-off energy​ (VCC = 600 V, IC = 1000 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	137 mJ
Turn-on energy​ (VCC = 600 V, IC = 1000 A, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	101 mJ

Diode

Parameter	Value
Forward voltage drop (Tvj = 125°C)	1.7 V
Reverse recovery ​(VR = 600 V, IF = 1000 A, dI/dt = 9355 A/µs, RG = 0.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	97 mJ

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT	0.039 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode	0.065 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch	0.028 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch	0.033 K/W

Dimensions

Parameter	Value
L x W x H	106 x 62 x 30.9 mm³
Clearance distance terminal to base​	23 mm
Clearance distance terminal to terminal​	11 mm
Surface creepage distance terminal to base​	29 mm
Surface creepage distance terminal to terminal​	23 mm
Mass​	310 g

Outline drawing

Outline

Schematics