SISD0200ST120i20_A01 - SwissSEM IGBT power module - dual / phase-leg

Tech-Specs

ST-type phase leg IGBT module

• i20 ultra-low loss fine pattern Trench IGBT chipset
• Baseplate isolation with efficient Al₂O₃ ceramic
• Cu baseplate for low thermal resistance
• Industry standard package 

ST-Type 1.2kV

• SISD0450ST120i20_A01
• SISD0300ST120i20_A01
• SISD0200ST120i20_A01

Maximum ratings

Parameter	Value
Collector-emitter voltage	1200 V
DC collector current​	200 A
Max. junction operating temperature	175 °C​

IGBT

Parameter	Value
Collector emitter saturation voltage (Tvj = 125°C)	2.05 V
Turn-off energy​ (VCC = 600 V, IC = 200 A, RG = 2 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	27 mJ
Turn-on energy​ (VCC = 600 V, IC = 200 A, RG = 5.5 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	24 mJ

Diode

Parameter	Value
Forward voltage drop (Tvj = 125°C)	1.85 V
Reverse recovery ​(VR = 600 V, IF = 200 A, dI/dt = 4700 A/µs, RG = 2 Ω, VGE = ± 15 V, Ls = 35 nH, inductive load, Tvj = 125°C)	10 mJ

Package Properties

Parameter	Value
IGBT thermal resistance ​junction to case Rth(j-c)_IGBT	0.136 K/W
Diode thermal resistance junction to case Rth(j-c)_Diode	0.208 K/W
IGBT thermal resistance case to heatsink Rth(c-s)_IGBT per switch	0.042 K/W
Diode thermal resistance ​case to heatsink Rth(c-s)_Diode per switch	0.047 K/W

Dimensions

Parameter	Value
L x W x H	106 x 62 x 30.9 mm³
Clearance distance terminal to base​	23 mm
Clearance distance terminal to terminal​	11 mm
Surface creepage distance terminal to base​	29 mm
Surface creepage distance terminal to terminal​	23 mm
Mass​	310 g

Outline drawing

Outline

Schematics